Polymers for Next-Generation Lithography
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Introduction
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The enabling technology to fabricate integrated circuits
with ever decreasing feature sizes
Next-generation photoresists must meet nanometer scale critical
dimension (CD) control and line-edge roughness (LER) requirements.
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Objective
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Develop and apply high-spatial resolution measurements to
enable the development of next-generation photoresists
Determine relative contribution of material and interfacial
factors in photoresist and anti-reflective coatings formulations
on CD control and LER
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NIST Role
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New measurements to answer critical questions
Fundamental studies with broad technology impact
Applicable to next-generation photoresist materials
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Highlights
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Photoacid reaction-diffusion front: nanometer resolution
Developer distribution in ultra-thin films
Water segregation: Interfacial and confinement dependence
Nanometer chemical depth profiling method
Antireflective coating / resist interfacial chemistry
Developer contributions to line-edge roughness
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Customers and Impact
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ISMT Proposal “Understanding Materials Causes of Line-Edge
Roughness”
DARPA Advanced Lithography Program Contract # N66001-00-C-8083
Semiconductor Fabtech invited article
Industry initiated contact for collaborative work.
NIST Office of Microelectronics Programs
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NIST Contributors
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Vivek Prabhu*
Eric Lin
Wen-li Wu
Erin Jablonski
Bryan Vogt
Christopher Soles
Ronald Jones
Tengjiao Hu
David VanderHart
Michael Wang
Dan Fischer
S. Sambasivan
Sushil Satija
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Collaborators:
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Dario Goldfarb(2)
Hiroshi Ito(2)
C. Grant Willson (6)
David Patterson (1)
Rama Puligadda (3)
C. Devadoss(3)
Marie Angelopoulos(2)
Ralph Dammel(5)
Frank Houlihan (5)
Karen Turnquest(4)
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