Our Publication:
Group:
ALL
Characterization
-Internal Capabilities
-Method Develop.
-Standards & Data
Electronics
Biomaterials
Multiphase
Processing
Multivariant
Year
:
ALL
---- 1999 ----
---- 2000 ----
---- 2001 ----
---- 2002 ----
---- 2003 ----
---- 2004 ----
---- 2005 ----
---- 2006 ----
---- 2007 ----
HOME
Organic Electronics
Moisture Transport through Ultra-Low Permeation Barriers
Chemistry and Orientation with NEXAFS Spectroscopy
Nanoimprint Lithography
Pattern Transfer and Stability
Polymers for Next-Generation Lithography
Dissolution Fundamentals
Surface and Bulk Chemistry of Chemically Amplified Photoresists
NIST-Industry Partnerships
Dimensional Metrology with Small Angle X-ray Scattering
Sidewall Angle Metrology
Dimensional Changes during Fabrication
Characterization of Porous Low-k Dielectric Thin Films
NIST-Industry Partnerships
International SEMATECH – Materials Sources of Line-Edge Roughness
Many interdependent variables that contribute to LER
193 nm resist materials anticipated for next nodes
Contract awarded to investigate model 193 nm materials
AZ Electronics Materials – Resists for Immersion Lithography
Simulated Immersion Experiments: Measurements of Resist Base Leaching
NIST - Intel CRADA – EUV Resist Fundamentals
Develop and apply measurement methods to identify materials limits for the fabrication of 32 nm and smaller structures by EUV lithography.
Intel
contacted Polymers Division (2/04)
CRADA Signed (11/04)
Polymer Photoresist Fundamentals
Critical Dimensional Metrology
Apply unique metrologies
Reflectivity (NCNR)
Transmission CD SAXS (APS)
Spectroscopy (BNL)
Goal: 32-nm node production by 2009
Electronics Materials Group
Polymers Division
Materials Science and Engineering Laboratory
