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Organic Electronics
    Moisture Transport through Ultra-Low Permeation Barriers
    Chemistry and Orientation with NEXAFS Spectroscopy
Nanoimprint Lithography
  Pattern Transfer and Stability
Polymers for Next-Generation Lithography
  Dissolution Fundamentals
  Surface and Bulk Chemistry of Chemically Amplified Photoresists
  NIST-Industry Partnerships
Dimensional Metrology with Small Angle X-ray Scattering
  Sidewall Angle Metrology
  Dimensional Changes during Fabrication
Characterization of Porous Low-k Dielectric Thin Films
 
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Chemistry and Orientation with NEXAFS Spectroscopy

 

Introduction

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  • Organic electronic devices involve several critical interfaces between disparate materials
  • Properties of these interfaces dominate performance.
  • NEXAFS provides chemistry and orientation information to develop meaningful correlations between materials, processing, electronic properties, and ultimate performance.
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    The organic field-effect transistor (OFET)
    The organic field-effect transistor (OFET)
     

    Near Edge X-ray Absorption Fine Structure Spectroscopy (NEXAFS)

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    Near Edge X-ray Absorption Fine Structure Spectroscopy (NEXAFS) Daniel Fischer, Sharadha Sambasivan (Ceramics Division, MSEL) NIST-Dow Beamline U7A, Brookhaven National Laboratory

  • Elemental absorption of soft X-ray radiation
  • Promotes K-shell electrons to unoccupied C, N, O, and F molecular orbitals
  • Polarization allows orientation-dependent thickness profiling
  • Nondestructive and automated
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    Chemistry Molecular orientation
    Chemistry Molecular orientation
     

    Results

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    Soluble pentacene precursor
  • New Material Concept
    “Soluble” pentacene to allow ink-jet printing of device
  • Challenge
    Interpreting device performance variations with conversion temperature.
  • NEXAFS
    Identifies performance tradeoff between increased molecular order and defects
  • Surface Coverage

     
     
     
    Orientation Development
    Full Correlation: processing --> structure and chemistry --> performance
     
     
     

    NIST Contributors

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    Dean DeLongchamp*
    Daniel Fischer
    Sharadha Sambasivan
    Eric Lin
     

    Collaborators:

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    Amanda R. Murphy, Jean M. J. Fréchet, Paul Chang, Steven Volkman, Vivek Subramanian
    Berkeley
     
     
     
     
     
     
     
     
     
     
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    Electronics Materials Group
    Polymers Division
    Materials Science and Engineering Laboratory

     
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