Characterization of Porous Low-k Dielectric Thin Films
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Introduction
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To reduce RC delay in future generation IC, insulator dielectric
constant (k) must decrease
Porous dielectric materials needed for 45 nm node
Incorporation of pores compromises mechanical strength of
the material ?failure during integration
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Objective
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Develop and apply high resolution measurements to enable
the development of low-k dielectric materials
Measurements for detailed structural characterization of
pore structure, wall density, and physical properties
Determine processing influences on the structure of porous
low-k materials and its integration into manufacturing environment
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NIST Role
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Develop measurements to answer critical questions as they
arise
Provide industry with highest quality database of different
low-k materials
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Highlights
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| Techniques for Different Materials Classes |
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| CD-SAXS for Patterned Low-k Materials |
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Customers and Impact
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Recognized leader for sophisticated characterization of
nanoporous thin films.
Recommended Practice Guide for X-ray Porosimetry for transfer
to industrial laboratories
Measurement methods can be applied to broad range of materials
and problems
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NIST Contributors
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Eric Lin*
Wen-li Wu*
Hae-Jeong Lee
Da-Wei Liu
Bryan Vogt
Ronald Hedden
Christopher Soles
Ronald Jones
Tengjiao Hu
Barry Bauer
Charles Glinka
Derek Ho
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Collaborators:
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Y. Liu (1)
Q Lin (2)
A. Grill (2)
H. Kim (2)
H. Fu (3)
K. Char (4)
D. Yoon (4)
J. Watkins (5)
J. Quintana (6)
D. Casa (6)
M. Ko (7)
M. Gallagher (8)
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